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Produktdetails:
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| Erkennungsgas: | AsH3 | Prinzip: | Elektrochemisch |
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| Reichweite: | 0 - 10 ppm | Empfindlichkeit: | 0,6 ± 0,2 μA/ppm |
| T90 Reaktionszeit: | ≤ 45 s | Auflösung: | 0,01 ppm |
| Grundlinie: | < ± 0,2 μA | Maximale Überlastung: | 10 PPMs |
| Hervorheben: | Electrochemical Gas Sensor 0-10ppm,MOCVD Gas Sensor Semiconductor Wafer Fab,YJJ 4ASH3-10 Gas Sensor |
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Product Description: YJJ 4ASH3-10 Electrochemical Gas Sensor 0-10ppm for Semiconductor Wafer Fab MOCVD Features: Core parameters - Detection gas: AsH3 Arsenic Hydride - Measurement range: 0 - 10 ppm - Maximum overload: 10 ppm - Sensitivity (20℃): **0.6 ± 0.2 μA/ppm** - T90 response time: **≤ 45 s** - Resolution: **0.01 ppm** - Baseline (clean air at 20℃): < ±0.2 μA - Full temperature range baseline drift (-20~50℃): equivalent < 0.5 ppm - Bias: **0 mV, no bias required** -
Ansprechpartner: Miss. Xu
Telefon: 86+13352990255