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S1227-33BR Si Photodiode Sensors For UV to Visible Precision Photometry Silicon

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CHINA ShenzhenYijiajie Electronic Co., Ltd. zertifizierungen
CHINA ShenzhenYijiajie Electronic Co., Ltd. zertifizierungen
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S1227-33BR Si Photodiode Sensors For UV to Visible Precision Photometry Silicon

S1227-33BR Si Photodiode Sensors For UV to Visible Precision Photometry Silicon
S1227-33BR Si Photodiode Sensors For UV to Visible Precision Photometry Silicon S1227-33BR Si Photodiode Sensors For UV to Visible Precision Photometry Silicon S1227-33BR Si Photodiode Sensors For UV to Visible Precision Photometry Silicon S1227-33BR Si Photodiode Sensors For UV to Visible Precision Photometry Silicon S1227-33BR Si Photodiode Sensors For UV to Visible Precision Photometry Silicon S1227-33BR Si Photodiode Sensors For UV to Visible Precision Photometry Silicon

Großes Bild :  S1227-33BR Si Photodiode Sensors For UV to Visible Precision Photometry Silicon

Produktdetails:
Herkunftsort: Japan
Markenname: Hamamatsu
Modellnummer: S1227-33BR
Zahlung und Versand AGB:
Min Bestellmenge: 1
Preis: Verhandlungsfähig
Verpackung Informationen: Standardpaket
Lieferzeit: 3-5 Arbeitstage
Zahlungsbedingungen: L/C, D/A, D/P, T/T, Western Union, MoneyGram
Versorgungsmaterial-Fähigkeit: 3000 Prozent/Monate

S1227-33BR Si Photodiode Sensors For UV to Visible Precision Photometry Silicon

Beschreibung
Lichtempfindlicher Bereich: × 2,4 2,4 Millimeter Paket: Keramik
Kühlung: nicht gekühlt Umkehrspannung (max.): 5 v
Hervorheben:

UV photodiode sensor for precision photometry

,

silicon photodiode sensor UV to visible

,

S1227-33BR photodiode sensor with warranty

S1227-33BR Si Photodiode Sensors For UV to Visible Precision Photometry Silicon

 

Features:
High uV sensitivity (quartz window type): QE 75 % (λ=200 nm)
Suppressed IR sensitivity
Low dark current

 

Applications:
Analytical equipment
Optical measurement equipment, etc.

 

Specification:

Spectral response range
340 to 1000 nm
Peak sensitivity wavelength (typ.) 720 nm
Photosensitivity (typ.) 0.43 A/W
Dark current (max.) 5 pA
Rise time (typ.) 0.5 μs
Terminal capacitance (typ.) 160 pF
Noise equivalent power (typ.) 2.1×10-15 W/Hz1/2

 

S1227-33BR Si Photodiode Sensors For UV to Visible Precision Photometry Silicon 0

Kontaktdaten
ShenzhenYijiajie Electronic Co., Ltd.

Ansprechpartner: Xu

Telefon: 86+13352990255

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